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| HAT1030T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-527 B Target Specification 3rd. Edition Features * * * * Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline HAT1030T Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch*2 Pch* Tch Tstg 3 1 Ratings -12 10 -2.5 -20 -2.5 1 1.5 150 -55 to +150 Unit V V A A A W W C C Notes: 1. PW 10s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf Min -12 10 -- -- -0.5 -- -- (3.0) -- -- -- -- -- -- -- Typ -- -- -- -- -- Max -- -- 10 -1 -1.5 Unit V V A A V Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 8V, VDS = 0 VDS = -12 V, VGS = 0 VDS = -10V, I D = -1mA I D = -2A, VGS = -4V*1 I D = -2A, VGS = -2.5V*1 I D = -2A, VDS = -10V*1 VDS = -10V VGS = 0 f = 1MHz VGS = -4V, ID = -2A VDD -10V (0.110) (0.135) (0.190) (0.260) (4.5) (400) (270) (115) (14) (90) (60) (85) -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns 2 HAT1030T Electrical Characteristics (Ta = 25C) (cont) Item Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test Symbol VDF t rr Min -- -- Typ (0.88) (45) Max (1.15) -- Unit V ns Test Conditions IF = -2.5A, VGS = 0*1 IF = -2.5A, VGS = 0 diF/ dt =20A/s Main Characteristics 3 HAT1030T Package Dimensions Unit: mm 4 HAT1030T When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5 |
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